Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 multilayer capacitor at room temperature

被引：3
|
作者：
Xie Dan [1 ]
Zang YongYuan [1 ]
Luo YaFeng [1 ]
Ren TianLing [1 ]
Liu LiTian [1 ]
Dang ZhiMin [2 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
[2] Beijing Univ Chem Technol, Coll Mat Sci & Engn, Beijing 100029, Peoples R China
来源：
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES | 2009年 / 52卷 / 01期
基金：
中国国家自然科学基金;
关键词：
BFO; PZT; MOCVD; properties; FeRAM; FATIGUE;
D O I：
10.1007/s11431-009-0007-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
BiFeO3/PZT multilayer capacitor was prepared on Pt(100)/Ti/SiO2/Si(100) substrate. PZT buffer layer was derived by MOCVD method (label: PZT(1)) and sputtering method (label: PZT(2)) respectively. XRD analysis indicated that high (110) orientation of BFO in the BFO/PZT(1) structure was achieved. SEM analysis indicated a better microstructure in the BFO/PZT(1) structure compared with BFO/PZT(2). The remnant polarization of the BFO/PZT(1) was 82.5 mu C/cm(2) at an applied voltage of 8 V, compared with that of 25.2 mu C/cm(2) in the BFO/PZT(2) structure. The BFO/PZT(1) multilayer exhibited little polarization fatigue (<1.5%) upon 1x10(10) switching cycles, at an applied voltage of 4 V. The leakage current density was about 2x10(-7) A/cm(2) at an applied voltage 4 V, in the BFO/PZT(1) capacitor. All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature.
引用
收藏
页码：10 / 14
页数：5
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