Bifurcation Diagrams in MOS-NDR Frequency Divider Circuits

被引：0
|
作者：
Nunez, Juan [1 ]
Avedillo, Maria J. [1 ]
Quintana, Jose M. [1 ]
机构：
[1] Univ Seville, IMSE, Inst Microelect Sevilla, CNM,CSIC, Seville, Spain
来源：
2012 19th IEEE International Conference on Electronics, Circuits and Systems (ICECS) | 2012年
关键词：
TUNNELING CHAOS CIRCUIT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an I-V characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an "all MOS" version of one previously reported which uses Resonant Tunneling Diodes (RTDs). The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit.
引用
收藏
页码：480 / 483
页数：4
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