Atomic layer deposition of Zn1-xMgxO:Al transparent conducting films

被引：15

作者：

Luka, G. ^{[1
]}

Witkowski, B. S. ^{[1
]}

Wachnicki, L. ^{[1
]}

Goscinski, K. ^{[1
]}

Jakiela, R. ^{[1
]}

Guziewicz, E. ^{[1
]}

Godlewski, M. ^{[1
,2
]}

Zielony, E. ^{[3
]}

Bieganski, P. ^{[3
]}

Placzek-Popko, E. ^{[3
]}

Lisowski, W. ^{[4
]}

Sobczak, J. W. ^{[4
]}

Jablonski, A. ^{[4
]}

机构：

[1] Polish Acad Sci, Inst Phys, Warsaw, Poland

[2] Cardinal Stefan Wyszynski Univ, Dept Math & Nat Sci, Coll Sci, Warsaw, Poland

[3] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[4] Polish Acad Sci, Inst Phys Chem, Warsaw, Poland

来源：

JOURNAL OF MATERIALS SCIENCE | 2014年 / 49卷 / 04期

关键词：

LIGHT-EMITTING DEVICES; OXIDE THIN-FILMS; ZINC-OXIDE;

D O I：

10.1007/s10853-013-7832-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum-doped zinc magnesium oxide (Zn1-xMgxO:Al) films with the Mg content from x = 0 to 0.48 were obtained using atomic layer deposition (ALD). Together with the thorough studies of the properties of the deposited films, the ALD growth parameters conditioning possible applications of Zn1-xMgxO: Al films as transparent electrodes are investigated. Very low film resistivities (<= similar to 10(-3) Omega cm) and the metallic-type conductivity behavior at room temperature for Zn1-xMgxO: Al films are observed for Mg content x < 0.19. The Mg content of x = 0.19 results in the optical absorption edge of Zn1-xMgxO: Al films at 3.81 eV (325 nm). Other film parameters like work function or sheet resistance can be easily modified by variation of growth parameters.

引用

页码：1512 / 1518

页数：7

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