MOCVD growth and properties of ZnO and Zn1-xMgxO films

被引：0
|
作者：
Zheng, YD [1 ]
Gu, SL [1 ]
Ye, JD [1 ]
Liu, W [1 ]
Zhu, SM [1 ]
机构：
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM | 2003年
关键词：
D O I：
10.1109/COS.2003.1278155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the high-quality ZnO based films were epitaxially deposited by low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique. The characteristics of ZnO films were studied as a function of the growth conditions such as the growth temperatures, and the flow ratio of II/VI, which dramatically affect the structure and the associated optical properties of the epilayer. The spontaneous emission spectrum measured at the low temperature of 4K shows an emission peak related to donor-bound exciton at the full width of 2nm, indicating rather high-quality of the ZnO epilayer obtained by optimizing the above growth conditions. The Zn1-xMgxO alloy thin film has been grown with the incorporation of Mg at a maximum value of x=0.22. The structure and optical properties of Zn1-xMgxO alloy thin film has then been discussed briefly.
引用
收藏
页码：19 / 22
页数：4
相关论文
共 50 条
  • [1] Growth of ZnO/Zn1-xMgxO films by pulsed laser ablation
    Maemoto, T
    Ichiba, N
    Sasa, S
    Inoue, M
    THIN SOLID FILMS, 2005, 486 (1-2) : 174 - 177
  • [2] Growth and Properties of ZnO/Zn1-xMgxO Core/Shell Nanoparticles
    Duan, W. J.
    Zhou, H.
    Yang, H. C.
    Wu, Z. L.
    Zheng, D.
    Wang, Y. S.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (11) : 9871 - 9876
  • [3] Growth and optical properties of ZnO/Zn1-xMgxO quantum wells on ZnO microrods
    Pieniazek, Agnieszka
    Teisseyre, Henryk
    Jarosz, Dawid
    Suffczynski, Jan
    Witkowski, Bartlomiej S.
    Kret, Slawomir
    Bockowski, Michal
    Reszka, Anna
    Godlewski, Marek
    Kozanecki, Adrian
    Kowalski, Bogdan J.
    NANOSCALE, 2019, 11 (05) : 2275 - 2281
  • [4] Growth and physical behaviour of Zn1-xMgxO films
    Reddy, A. Suryanarayana
    Prathap, P.
    Subbaiah, Y. P. V.
    Reddy, K. T. Ramakrishna
    Yi, J.
    THIN SOLID FILMS, 2008, 516 (20) : 7084 - 7087
  • [5] Role of ZnO and MgO interfaces on the growth and optoelectronic properties of atomic layer deposited Zn1-xMgxO films
    Gnanasambandan, Poorani
    Adjeroud, Noureddine
    Leturcq, Renaud
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2022, 40 (06):
  • [6] Growth of Zn1-xMgxO films by pulsed laser deposition
    Zou, Lu
    Ye, Zhizhen
    Huang, Jingyun
    Zhao, Binghui
    2002, Science Press (23):
  • [7] Study on phase transition of Zn1-xMgxO thin films grown by MOCVD process
    Chiba, Yoshiyuki
    Meng, F. Y.
    Yamada, Akira
    Konagai, Makoto
    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 567 - 570
  • [8] Photoluminescence characteristics of Zn1-xMgxO films
    Fang Qing-Qing
    Wang Wei-Na
    Zhou Jun
    Wang Sheng-Nan
    Yan Fang-Liang
    Liu Yan-Mei
    Li Yan
    Lue Qing-Rong
    ACTA PHYSICA SINICA, 2009, 58 (08) : 5836 - 5841
  • [9] Structural and Dielectric Properties of Zn1-xMgxO
    Kumar, Parmod
    Kumar, Yogesh
    Malik, Hitendra K.
    Asokan, K.
    SOLID STATE PHYSICS, VOL 57, 2013, 1512 : 990 - 991
  • [10] Structural characterization and photoluminescent properties of Zn1-xMgxO films on silicon
    Zou, L
    Ye, ZZ
    Huang, JY
    Zhao, BH
    CHINESE PHYSICS LETTERS, 2002, 19 (09) : 1350 - 1352
12345