MOCVD growth and properties of ZnO and Zn1-xMgxO films

被引：0
|
作者：
Zheng, YD [1 ]
Gu, SL [1 ]
Ye, JD [1 ]
Liu, W [1 ]
Zhu, SM [1 ]
机构：
[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
来源：
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM | 2003年
关键词：
D O I：
10.1109/COS.2003.1278155
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the high-quality ZnO based films were epitaxially deposited by low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique. The characteristics of ZnO films were studied as a function of the growth conditions such as the growth temperatures, and the flow ratio of II/VI, which dramatically affect the structure and the associated optical properties of the epilayer. The spontaneous emission spectrum measured at the low temperature of 4K shows an emission peak related to donor-bound exciton at the full width of 2nm, indicating rather high-quality of the ZnO epilayer obtained by optimizing the above growth conditions. The Zn1-xMgxO alloy thin film has been grown with the incorporation of Mg at a maximum value of x=0.22. The structure and optical properties of Zn1-xMgxO alloy thin film has then been discussed briefly.
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页码：19 / 22
页数：4
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