Atomic layer deposition of Zn1-xMgxO:Al transparent conducting films

被引：15

作者：

Luka, G. ^{[1
]}

Witkowski, B. S. ^{[1
]}

Wachnicki, L. ^{[1
]}

Goscinski, K. ^{[1
]}

Jakiela, R. ^{[1
]}

Guziewicz, E. ^{[1
]}

Godlewski, M. ^{[1
,2
]}

Zielony, E. ^{[3
]}

Bieganski, P. ^{[3
]}

Placzek-Popko, E. ^{[3
]}

Lisowski, W. ^{[4
]}

Sobczak, J. W. ^{[4
]}

Jablonski, A. ^{[4
]}

机构：

[1] Polish Acad Sci, Inst Phys, Warsaw, Poland

[2] Cardinal Stefan Wyszynski Univ, Dept Math & Nat Sci, Coll Sci, Warsaw, Poland

[3] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[4] Polish Acad Sci, Inst Phys Chem, Warsaw, Poland

来源：

JOURNAL OF MATERIALS SCIENCE | 2014年 / 49卷 / 04期

关键词：

LIGHT-EMITTING DEVICES; OXIDE THIN-FILMS; ZINC-OXIDE;

D O I：

10.1007/s10853-013-7832-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum-doped zinc magnesium oxide (Zn1-xMgxO:Al) films with the Mg content from x = 0 to 0.48 were obtained using atomic layer deposition (ALD). Together with the thorough studies of the properties of the deposited films, the ALD growth parameters conditioning possible applications of Zn1-xMgxO: Al films as transparent electrodes are investigated. Very low film resistivities (<= similar to 10(-3) Omega cm) and the metallic-type conductivity behavior at room temperature for Zn1-xMgxO: Al films are observed for Mg content x < 0.19. The Mg content of x = 0.19 results in the optical absorption edge of Zn1-xMgxO: Al films at 3.81 eV (325 nm). Other film parameters like work function or sheet resistance can be easily modified by variation of growth parameters.

引用

页码：1512 / 1518

页数：7

共 50 条

[31] Effect of substrate temperature on the properties of Zn1-xMgxO films on silicon
Zou, L
Ye, ZZ
Huang, JY
Zhao, BH
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (28-29): : 4255 - 4258
[32] Effect of Mg content and annealing on the structure of Zn1-xMgxO films
Wang, Bao-Ming
Wu, Yue-Cai
Li, Cheng-Jun
Gongneng Cailiao/Journal of Functional Materials, 2010, 41 (SUPPL. 1): : 45 - 47
[33] Characterization of novel sprayed Zn1-xMgxO films for photovoltaic application
Prathap, P.
Reddy, A. Suryanarayana
Reddy, G. Ramachandra
Miles, R. W.
Reddy, K. T. Ramakrishna
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (09) : 1434 - 1436
[34] Influence of the deposition temperature on electronic transport and structural properties of radio frequency magnetron-sputtered Zn1-xMgxO:Al and ZnO:Al films
André Bikowski
Klaus Ellmer
Journal of Materials Research, 2012, 27 : 2249 - 2256
[35] Influence of the deposition temperature on electronic transport and structural properties of radio frequency magnetron-sputtered Zn1-xMgxO:Al and ZnO:Al films
Bikowski, Andre
Ellmer, Klaus
JOURNAL OF MATERIALS RESEARCH, 2012, 27 (17) : 2249 - 2256
[36] Transparent conducting CuCr1-xMgxO2 films prepared by pulsed laser deposition
Li, Da
Fang, Xiaodong
Tao, Ruhua
Dong, Weiwei
Deng, Zanhong
Zhu, Xuebin
LASERS IN MATERIAL PROCESSING AND MANUFACTURING III, 2008, 6825
[37] Fabrication of Zn1-xMgxO Buffer Layers for CIGS Solar Cells by Atomic Layer Deposition using Mg(CpEt)2 as a Mg Source
Lee, Chang-Soo
Shin, Young-Min
Ahn, B. T.
PHOTOVOLTAICS FOR THE 21ST CENTURY 7, 2011, 41 (04): : 213 - 219
[38] Structural and Dielectric Properties of Zn1-xMgxO
Kumar, Parmod
Kumar, Yogesh
Malik, Hitendra K.
Asokan, K.
SOLID STATE PHYSICS, VOL 57, 2013, 1512 : 990 - 991
[39] Effects of Mg doping on the properties of highly transparent conductive and near infrared reflective Zn1-xMgxO:Ga films
Ma, Quan-Bao
He, Hal-Ping
Ye, Zhi-Zhen
Zhu, Li-Ping
Huang, Jing-Yun
Zhang, Yin-Zhu
Zhao, Bing-Hui
JOURNAL OF SOLID STATE CHEMISTRY, 2008, 181 (03) : 525 - 529
[40] ZnO as Transparent Conducting Oxide by Atomic Layer Deposition
Sinha, Soumyadeep
Sarkar, Shaibal K.
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 1183 - 1186

← 1 2 3 4 5 →