Asymmetric resistive switching effect in ZnO/Nb:SrTiO3 heterojunctions

被引：4
|
作者：
Jia, Caihong [1 ]
Ren, Yong [1 ]
Yang, Guang [1 ]
Li, Jiachen [1 ]
Chen, Yonghai [2 ,3 ]
Zhang, Weifeng [1 ]
机构：
[1] Henan Univ, Sch Phys & Elect, Lab Low Dimens Mat Sci, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2018年 / 124卷 / 02期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1007/s00339-018-1586-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Asymmetric resistive switching processes were observed in ZnO/Nb:SrTiO3 (NSTO) heterojunctions. The SET transition time from high-to low-resistance state transition is in the range of 100 ns under + 5 V bias, while the RESET transition time from low-to high-resistance state is in the range of 1 ms under -5 V bias. A model of trapping/detrapping electrons coupled with the drift of oxygen vacancies toward/away from interface is proposed to understand this asymmetric resistive switching process. This switch with fast SET and slow RESET transition may have potential applications in some special regions.
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收藏
页数：6
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