Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure

被引：3

作者：

Shen, J. X. ^{[1
]}

Qian, H. Q. ^{[1
]}

Zhang, Y. ^{[1
]}

Wang, G. F. ^{[1
]}

Shen, J. Q. ^{[1
]}

Wang, S. L. ^{[1
]}

Cui, C. ^{[1
]}

Li, P. G. ^{[1
]}

Lei, M. ^{[2
,3
]}

Tang, W. H. ^{[2
,3
]}

机构：

[1] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China

来源：

MATERIALS TECHNOLOGY | 2013年 / 28卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Oxygen vacancy concentration; Electrical properties; Resistive switching; Schottky barrier; Resistance distribution; CURRENT-VOLTAGE CHARACTERISTICS;

D O I：

10.1179/1753555713Y.0000000076

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With the aim to get optimised resistive switching properties, the influence of oxygen vacancy concentration of Nb:SrTiO3 (NSTO) on the resistive switching properties of Ag/NSTO/Ti structure was studied. To obtain the NSTO with different oxygen vacancy concentrations, the substrates had been annealed in different atmospheres and temperatures before they were used to fabricate Ag/NSTO/Ti structure. The resistive switching properties were investigated by measuring I-V characteristics, endurance ability and resistance distribution at room temperature. The results show that both annealing in oxygen atmosphere and vacuum atmosphere degraded the switching properties. In our case, the device annealed in air at 700 degrees C displayed the best resistive switching behaviour. After analysis, we suggest that both Schottky barrier height and barrier width, which can be tuned by changing the oxygen vacancy concentration, play important roles in getting high quality resistive switching property.

引用

页码：375 / 379

页数：5

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