Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 interface

被引：46
|
作者：
Sun, J.
Jia, C. H.
Li, G. Q.
Zhang, W. F. [1 ]
机构：
[1] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期
基金：
中国国家自然科学基金;
关键词：
DOPED SRTIO3; TRANSITION; VACANCIES; MEMORY; FILMS; OXIDE;
D O I：
10.1063/1.4755842
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The resistive switching behaviors of indium (In)/Nb:SrTiO3 (NSTO) with different metal/semiconductor contacts are investigated. The In electrodes with the Schottky contacts are fabricated on NSTO surface using direct current reactive magnetron sputtering, and the fresh In is directly pressed to form the Ohmic contact. The device with one Schottky barrier displays a normal bipolar resistive switching (BRS) behavior, while the device with two Schottky barriers shows an abnormal BRS behavior. The results demonstrate that the injection and trapping or detrapping of carriers near the interface between the metal electrode and semiconductor are closely related to the resistive switching performance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4755842]
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页数：4
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