Nanogap Resistance Random Access Memory Based on Natural Aluminum Oxide

被引：4

作者：

Miyabe, Toru ^{[1
]}

Nakaoka, Toshihiro ^{[1
]}

机构：

[1] Sophia Univ, Fac Sci & Technol, Chiyoda Ku, Tokyo 1028554, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期

关键词：

ELECTRICAL DETECTION; TRANSISTOR;

D O I：

10.7567/JJAP.52.04CJ08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report unipolar and bipolar resistive switchings in naturally oxidized AlxO1-x thin films. We find a relationship between the switching behavior and the electrode gap distance. The macro-gap device with the electrode separation of 20 mu m shows a unipolar switching behavior while the nano-gap device with the separation of 40nm shows a bipolar behavior. The result is explained by a model in which the unipolar or the bipolar switching is governed by the way of the carrier injection into oxygen vacancies. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

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