Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide

被引：20
|
作者：
Chen, Min-Chen [1 ]
Chang, Ting-Chang [1 ,2 ]
Huang, Sheng-Yao [1 ]
Chang, Guan-Chang [8 ]
Chen, Shih-Cheng [3 ,4 ]
Huang, Hui-Chun [8 ]
Hu, Chih-Wei [5 ]
Sze, Simon M. [1 ,5 ]
Tsai, Tsung-Ming [8 ]
Gan, Der-Shin [8 ]
Yeh , Fon-Shan [3 ,4 ]
Tsai, Ming-Jinn [6 ,7 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[3] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[4] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[6] Ind Technol Res Inst, Elect Res Lab, Hsinchu 300, Taiwan
[7] Ind Technol Res Inst, Optoelect Res Lab, Hsinchu 300, Taiwan
[8] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 12期
关键词：
D O I：
10.1149/2.007112esl
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This paper investigates the effect of oxygen concentrations of InGaZnO films on the resistive switching characteristics of a Pt/InGaZnO (IGZO)/TiN structure. The IGZO films were prepared by an RF magnetron sputtering system at various oxygen partial pressures at room temperature. The memory devices reveal a reversible unipolar switching behavior. In addition, the high-resistance state current was found to be strongly dependent on oxygen concentration. X-ray photoelectron spectroscopy analyses attributed this phenomenon to the non-lattice oxygen concentration in the IGZO thin films, rather than the change in crystalline constituent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007112esl] All rights reserved.
引用
收藏
页码：H475 / H477
页数：3
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