Nanogap Resistance Random Access Memory Based on Natural Aluminum Oxide

被引：4
|
作者：
Miyabe, Toru [1 ]
Nakaoka, Toshihiro [1 ]
机构：
[1] Sophia Univ, Fac Sci & Technol, Chiyoda Ku, Tokyo 1028554, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期
关键词：
ELECTRICAL DETECTION; TRANSISTOR;
D O I：
10.7567/JJAP.52.04CJ08
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report unipolar and bipolar resistive switchings in naturally oxidized AlxO1-x thin films. We find a relationship between the switching behavior and the electrode gap distance. The macro-gap device with the electrode separation of 20 mu m shows a unipolar switching behavior while the nano-gap device with the separation of 40nm shows a bipolar behavior. The result is explained by a model in which the unipolar or the bipolar switching is governed by the way of the carrier injection into oxygen vacancies. (C) 2013 The Japan Society of Applied Physics
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页数：3
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