Positive resists for electron-beam and X-ray lithography

被引：0
|
作者：
Bulgakova, SA [1 ]
Mazanova, LM [1 ]
Semchikov, YD [1 ]
Lopatin, AY [1 ]
Luchin, VI [1 ]
Salashchenko, NN [1 ]
机构：
[1] N Novgorod State Univ, Chem Res Inst, Nizhnii Novgorod, Russia
来源：
APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1 | 1998年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time the method of chemical modification of polymetylmethacrylate (PMMA) as a positive radiation resist which allows 2-3 fold increase of PMMA sensitivity to radiation without the lost of its high resolution;has been proposed. Organohydrydedisilanes (DS) have been used as modificators of the polymer. These modificators include Si-Si bonds weaker than C-C bonds which make a contribution to the increase of efficiency of the polymer chain scissions upon irradiation. The lines of 0,14 mu m width were produced in the 0,4 mu m thick PMMA films by electron-beam lithography. Based on the MMA copolymers modified by DS two resists of 5-8 times higher sensitivity than PMMA and the contrast similar to it have been developed.
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页码：81 / 82
页数：2
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