Positive resists for electron-beam and X-ray lithography

For the first time the method of chemical modification of polymetylmethacrylate (PMMA) as a positive radiation resist which allows 2-3 fold increase of PMMA sensitivity to radiation without the lost of its high resolution;has been proposed. Organohydrydedisilanes (DS) have been used as modificators of the polymer. These modificators include Si-Si bonds weaker than C-C bonds which make a contribution to the increase of efficiency of the polymer chain scissions upon irradiation. The lines of 0,14 mu m width were produced in the 0,4 mu m thick PMMA films by electron-beam lithography. Based on the MMA copolymers modified by DS two resists of 5-8 times higher sensitivity than PMMA and the contrast similar to it have been developed.