Positive resists for electron-beam and X-ray lithography

被引：0

作者：

Bulgakova, SA ^{[1
]}

Mazanova, LM ^{[1
]}

Semchikov, YD ^{[1
]}

Lopatin, AY ^{[1
]}

Luchin, VI ^{[1
]}

Salashchenko, NN ^{[1
]}

机构：

[1] N Novgorod State Univ, Chem Res Inst, Nizhnii Novgorod, Russia

来源：

APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1 | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time the method of chemical modification of polymetylmethacrylate (PMMA) as a positive radiation resist which allows 2-3 fold increase of PMMA sensitivity to radiation without the lost of its high resolution;has been proposed. Organohydrydedisilanes (DS) have been used as modificators of the polymer. These modificators include Si-Si bonds weaker than C-C bonds which make a contribution to the increase of efficiency of the polymer chain scissions upon irradiation. The lines of 0,14 mu m width were produced in the 0,4 mu m thick PMMA films by electron-beam lithography. Based on the MMA copolymers modified by DS two resists of 5-8 times higher sensitivity than PMMA and the contrast similar to it have been developed.

引用

页码：81 / 82

页数：2

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