共 50 条
- [1] Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 295 - 298
- [2] Calculation of the anisotropy of the Hall mobility in n-type 4H- and 6H-SiC Materials Science Forum, 1998, 264-268 (pt 1): : 295 - 298
- [3] Theoretical calculation of the electron Hall mobility in n-type 4H-and 6H-SiC SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 729 - 732
- [6] MicroRaman and Hall effect study of n-type bulk 4H-SiC SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 707 - 710
- [7] Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H-and 4H-SiC WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 275 - 280
- [9] Impurity conduction in n-type 4H-SiC III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 637 - 642