Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

被引：0
|
作者：
Iwata, Hisaomi [1 ]
Itoh, Kohei M. [1 ]
机构：
[1] Dept. of Appl. Phys. and Phys.-Info., Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
相关论文
共 50 条
  • [1] Calculation of the anisotropy of the hall mobility in n-type 4H- and 6H-SiC
    Kinoshita, T
    Itoh, KM
    Muto, J
    Schadt, M
    Pensl, G
    Takeda, K
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 295 - 298
  • [2] Calculation of the anisotropy of the Hall mobility in n-type 4H- and 6H-SiC
    Kinoshita, T.
    Itoh, K.M.
    Muto, J.
    Schadt, M.
    Pensl, G.
    Takeda, K.
    Materials Science Forum, 1998, 264-268 (pt 1): : 295 - 298
  • [3] Theoretical calculation of the electron Hall mobility in n-type 4H-and 6H-SiC
    Iwata, H
    Itoh, KM
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 729 - 732
  • [4] Theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
    Velmre, Enn
    Udal, Andres
    Materials Science Forum, 2000, 338
  • [5] Theory of the anisotropy of the electron Hall mobility in n-type 4H-and 6H-SiC
    Iwata, H
    Itoh, KM
    Pensl, G
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) : 1956 - 1961
  • [6] Electrically active defects in n-type 4H- and 6H-SiC
    Doyle, JP
    Aboelfotoh, MO
    Svensson, BG
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 565 - 568
  • [7] A theoretical study of electron drift mobility anisotropy in n-type 4H-and 6H-SiC
    Velmre, E
    Udal, A
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 725 - 728
  • [8] Theory of the electron mobility in n-type 6H-SiC
    Kinoshita, T
    Itoh, KM
    Schadt, M
    Pensl, G
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) : 8193 - 8198
  • [9] Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H-and 6H-SiC
    Iwata, H
    Itoh, KM
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6228 - 6234
  • [10] The minority carrier lifetime of n-type 4H- and 6H-SiC epitaxial layers
    Kordina, O
    Bergman, JP
    Hallin, C
    Janzen, E
    APPLIED PHYSICS LETTERS, 1996, 69 (05) : 679 - 681
12345