Theoretical calculation of the electron Hall mobility in n-type 4H- and 6H-SiC

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作者：
Iwata, Hisaomi [1 ]
Itoh, Kohei M. [1 ]
机构：
[1] Dept. of Appl. Phys. and Phys.-Info., Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
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Materials Science Forum | 2000年 / 338卷
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