Theoretical calculation of the electron Hall mobility in n-type 4H-and 6H-SiC

被引：16
|
作者：
Iwata, H [1 ]
Itoh, KM [1 ]
机构：
[1] Keio Univ, Dept Appl Phys & Physicoinformat, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
electron transport; Hall effect; mobility;
D O I：
10.4028/www.scientific.net/MSF.338-342.729
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the theoretical calculation of the electron Hall mobility in nitrogen doped n-type 4H- and 6H-SiC as a function of temperature, net-doping concentration ([N-D]-[N-A]), and compensation ratio ([N-A]/[N-D]) The electron Hall mobility is found for two temperatures, T=77K and 300K, covering a wide range of the net-doping concentration (10(14)-10(19)[cm(-3)]) and the compensation ratio (0-0.6).
引用
收藏
页码：729 / 732
页数：4
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