Hall mobility in n-type 4H-Sic:: Calculation using hydrodynamic balance equations

被引：0
|
作者：
Quan, HJ
Wang, BH [1 ]
Luo, XS
机构：
[1] Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Ctr Nonlinear Sci, Hefei 230026, Peoples R China
[3] Shaoguan Univ, Dept Phys, Shaoguan 512005, Peoples R China
[4] CCAST, World Lab, Beijing 100080, Peoples R China
[5] Guangxi Normal Univ, Dept Phys & Elect Sci, Guilin 541004, Peoples R China
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 03期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1142/S0217979202008051
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Hall mobility in n-type 4H-SiC has been calculated by hydrodynamic balance equations for temperatures ranging from 30 to 1000 K. We employ a compensation model to analyze the carrier concentration versus temperature data. The results show that the neutral impurity scattering and the piezoelectric scattering do not make significant contribution to the electron mobility. The low-temperature value of the mobility is mainly due to the ionized impurity while the high-temperature tail is limited by acoustic, polar optical and intervalley optical lattice scatterings. These results are in good agreement with the experimental data.
引用
收藏
页码：463 / 471
页数：9
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