A new gate driver integrated circuit for IGBT devices with advanced protections

被引：78
|
作者：
Dulau, L [1 ]
Pontarollo, S [1 ]
Boimond, A [1 ]
Garnier, JF [1 ]
Giraudo, N [1 ]
Terrasse, O [1 ]
机构：
[1] STMicroelect, F-38019 Grenoble, France
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2006年 / 21卷 / 01期
关键词：
active Miller clamp; bipolar CMOS DMOS (BCD); cross conduction; insulated gate bipolar transistor (IGBT); overshoot; peak current; two-level driver;
D O I：
10.1109/TPEL.2005.861115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.
引用
收藏
页码：38 / 44
页数：7
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