A new gate driver integrated circuit for IGBT devices with advanced protections

被引：78
|
作者：
Dulau, L [1 ]
Pontarollo, S [1 ]
Boimond, A [1 ]
Garnier, JF [1 ]
Giraudo, N [1 ]
Terrasse, O [1 ]
机构：
[1] STMicroelect, F-38019 Grenoble, France
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2006年 / 21卷 / 01期
关键词：
active Miller clamp; bipolar CMOS DMOS (BCD); cross conduction; insulated gate bipolar transistor (IGBT); overshoot; peak current; two-level driver;
D O I：
10.1109/TPEL.2005.861115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.
引用
收藏
页码：38 / 44
页数：7
相关论文
共 50 条
  • [31] Temperature adaptive IGBT gate-driver design
    Wu, T.
    Castellazzi, A.
    PROCEEDINGS OF THE 2011-14TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE 2011), 2011,
  • [32] Gate Driver Circuit for ZVS Mode
    Madankov, Yasen Kostadinov
    Lichev, Angel Angelov
    Bankov, Nikolay Dimitrov
    Vuchev, Aleksandar Stoyanov
    2016 XXV INTERNATIONAL SCIENTIFIC CONFERENCE ELECTRONICS (ET), 2016,
  • [33] Study on Current-Driven IGBT Driver Circuit
    Abe, Yudai
    Iwabuchi, Akio
    Matsuda, Jun-ichi
    Yamamoto, Souma
    Kuwana, Anna
    Du, Haoyang
    Kamio, Takafumi
    Hosono, Takashi
    Kobayashi, Haruo
    2021 36TH INTERNATIONAL TECHNICAL CONFERENCE ON CIRCUITS/SYSTEMS, COMPUTERS AND COMMUNICATIONS (ITC-CSCC), 2021,
  • [34] Research on High Power Density IGBT Driver Circuit
    Zhang, Shaokun
    Fan, Tao
    Wen, Xuhui
    2018 21ST INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS), 2018, : 1460 - 1463
  • [35] The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection
    Liu, Xing
    Kowalsky, Jens
    Herrmann, Clemens
    Baeumler, Christia
    Lutz, Josef
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (10) : 10789 - 10798
  • [36] Realization of an IGBT Gate Driver With Dualphase Turn-On/Off Gate Control
    Chen, You-Da
    Chin, Albert
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2020, 8 (08): : 1089 - 1095
  • [37] TVS Diode Coupled Gate Driver Circuit for Series Connected Power Devices used in Circuit Breaker Applications
    Ravi, Lakshmi
    Liu, Jian
    Dong, Dong
    Burgos, Rolando
    Song, Xiaoqing
    Cairoli, Pietro
    IECON 2021 - 47TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2021,
  • [38] Advanced passive devices for enhanced integrated RF circuit performance
    Coolbaugh, D
    Eshun, E
    Groves, R
    Harame, D
    Johnson, J
    Hammad, M
    He, Z
    Ramachandran, V
    Stein, K
    St Onge, S
    Subbanna, S
    Wang, D
    Volant, R
    Wang, X
    Watson, K
    2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, : 341 - 344
  • [39] Advanced passive devices for enhanced integrated RF circuit performance
    Coolbaugh, D
    Eshun, E
    Groves, R
    Harame, D
    Johnson, J
    Hammad, M
    He, Z
    Ramachandran, V
    Stein, K
    St Onge, S
    Subbanna, S
    Wang, D
    Volant, R
    Wang, X
    Watson, K
    2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 187 - 190
  • [40] Gate Driver Integrated Circuit with Breakdown Protection for Switch-mode Power Amplifiers
    Yang, Jong-Ryul
    AUTOMATIKA, 2016, 57 (02) : 506 - 513
12345