A new gate driver integrated circuit for IGBT devices with advanced protections

被引：78

作者：

Dulau, L ^{[1
]}

Pontarollo, S ^{[1
]}

Boimond, A ^{[1
]}

Garnier, JF ^{[1
]}

Giraudo, N ^{[1
]}

Terrasse, O ^{[1
]}

机构：

[1] STMicroelect, F-38019 Grenoble, France

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2006年 / 21卷 / 01期

关键词：

active Miller clamp; bipolar CMOS DMOS (BCD); cross conduction; insulated gate bipolar transistor (IGBT); overshoot; peak current; two-level driver;

D O I：

10.1109/TPEL.2005.861115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.

引用

页码：38 / 44

页数：7

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