Near room-temperature ferromagnetism in BixCr1-xTe2 epitaxial thin films grown on GaAs(111)B by molecular beam epitaxy

被引：1

作者：

Yan, Pengfei ^{[1
]}

Xu, Yongkang ^{[1
]}

Wang, Jin ^{[1
]}

Zhang, Xiaolong ^{[1
]}

Dai, Xingze ^{[1
]}

Wang, Chao ^{[2
,3
]}

He, Liang ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, State Key Lab Spintron Devices & Technol, Nanjing 210023, Peoples R China

[2] Shenzhen Univ, Coll Mechatron & Control Engn, Inst Nanosurface Sci & Engn, Shenzhen 518060, Peoples R China

[3] Shenzhen Univ, Natl Key Lab Radio Frequency Heterogeneous Integra, Shenzhen 518060, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2024年 / 124卷 / 06期

基金：

中国国家自然科学基金;

关键词：

INTRINSIC FERROMAGNETISM; INTERFACE; 1T-CRTE2; FE3GATE2;

D O I：

10.1063/5.0181079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mn-doped monoclinic beta-(Ga1-xMnx)(2)O-3 thin films were epitaxially grown on alpha-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique. The crystal lattice expands and the energy band gap shrinks with the increase of Mn content for Mn ions incorporated into the Ga site. Ferromagnetism appears even above room temperature when x >= 0.11 and can be remarkably enhanced with the continuous increase of Mn indicated by the increased magnetization and coercivity. This study presents a promising candidate for use in spintronic devices that are capable of working at room temperature.

引用

页数：7

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