Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations

被引：7
|
作者：
Galiev, GB [1 ]
Mokerov, VG
Slepnev, YV
Khabarov, YV
Lomov, AA
Imamov, RM
机构：
[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia
[2] Russian Acad Sci, Inst Crystallog, Moscow 117333, Russia
来源：
TECHNICAL PHYSICS | 1999年 / 44卷 / 07期
关键词：
Arsenic; GaAs; Gallium; Strong Influence; Molecular Beam Epitaxy;
D O I：
10.1134/1.1259351
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The structural perfection of GaAs epitaxial films grown by molecular beam epitaxy on substrates with the (100), (111)A, and (111)B orientations is investigated by double-crystal and triple-crystal x-ray diffractometry. It is found that the ratio gamma of the molecular fluxes of arsenic and gallium has a strong influence on the structural quality of the epitaxial films. The optimum values of the parameter gamma are found for each of the substrate orientations (100), (111)A, and (111)B. (C) 1999 American Institute of Physics. [S1063-7842(99)01407-5].
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收藏
页码：801 / 803
页数：3
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