Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)B orientations

被引：0
|
作者：
G. B. Galiev
V. G. Mokerov
Yu. V. Slepnev
Yu. V. Khabarov
A. A. Lomov
R. M. Imamov
机构：
[1] Russian Academy of Sciences,Institute of Radio Engineering and Electronics
[2] Russian Academy of Sciences,Institute of Crystallography
来源：
Technical Physics | 1999年 / 44卷
关键词：
Arsenic; GaAs; Gallium; Strong Influence; Molecular Beam Epitaxy;
D O I：
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学科分类号：
摘要：
The structural perfection of GaAs epitaxial films grown by molecular beam epitaxy on substrates with the (100), (111)A, and (111)B orientations is investigated by double-crystal and triple-crystal x-ray diffractometry. It is found that the ratio γ of the molecular fluxes of arsenic and gallium has a strong influence on the structural quality of the epitaxial films. The optimum values of the parameter γ are found for each of the substrate orientations (100), (111)A, and (111)B.
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页码：801 / 803
页数：2
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