Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates

被引：11
|
作者：
Tracy, Brian D. [1 ]
Li, Xiang [2 ]
Liu, Xinyu [2 ]
Furdyna, Jacek [2 ]
Dobrowolska, Margaret [2 ]
Smith, David J. [1 ]
机构：
[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2016年 / 453卷
基金：
美国国家科学基金会;
关键词：
Characterization; Crystal structure; Molecular beam epitaxy; Semiconducting materials; NANOCRYSTALS; POLYTYPES; CRYSTALS;
D O I：
10.1016/j.jcrysgro.2016.06.022
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 degrees C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn >= 10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011](SnSe)//1 (1) over bar0](GaAs), while the diselenide films were consistent with the Space Group P (3) over bar m1, and had the epitaxial growth relationship [2 (1) over bar(1) over bar0](SnSe2)//[1 (1) over bar0](GaAs). (C) 2016 Published by Elsevier B.V.
引用
收藏
页码：58 / 64
页数：7
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