Accompanying growth and room-temperature ferromagnetism of η-Mn3N2 thin films by molecular beam epitaxy

被引：5

作者：

Yu, Fengmei ^{[1
,2
]}

Liu, Yajing ^{[1
]}

Yang, Mei ^{[1
]}

Wu, Shuxiang ^{[1
]}

Zhou, Wenqi ^{[1
]}

Li, Shuwei ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[2] Zhongkai Univ Agr & Engn, Informat Coll, Guangzhou 510225, Guangdong, Peoples R China

来源：

THIN SOLID FILMS | 2013年 / 531卷

基金：

中国国家自然科学基金;

关键词：

Molecular beam epitaxy; Accompanying growth; Room-temperature ferromagnetism; Thin film; Manganese nitrides; MAGNETIC-PROPERTIES; CRYSTAL-STRUCTURE;

D O I：

10.1016/j.tsf.2013.01.087

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

eta-phase manganese nitride films have been grown on LaAlO3 (100) and LaSrAlO4 (001) substrates by using plasma-assisted molecular beam epitaxy. On the basis of reflective high energy electron diffraction, X-ray diffraction, and X-ray photoemission spectroscopy, it is confirmed that two types of eta-Mn3N2 with different lattice constants coexist in the films due to the lattice mismatches between the Mn3N2 films and the substrates. Magnetic properties of the films were characterized by a superconducting quantum interference device magnetometer at room temperature. The Mn3N2 films on LaAlO3 substrate were found to have room-temperature ferromagnetism. Two potential interaction mechanisms are proposed regarding the origin of the observed ferromagnetism. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.

引用

页码：228 / 232

页数：5

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