Specular Electron Focusing between Gate-Defined Quantum Point Contacts in Bilayer Graphene

被引:7
|
作者
Ingla-Aynes, Josep [1 ]
Manesco, Antonio L. R. [1 ]
Ghiasi, Talieh S. S. [1 ]
Volosheniuk, Serhii [1 ]
Watanabe, Kenji [2 ]
Taniguchi, Takashi [3 ]
van der Zant, Herre S. J. [1 ]
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[2] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan
[3] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
关键词
ballistic transport; bilayer graphene; quantumpoint contact; trigonal warping; CONDUCTION;
D O I
10.1021/acs.nanolett.3c00499
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report multiterminal measurements in a ballisticbilayer graphene(BLG) channel, where multiple spin- and valley-degenerate quantumpoint contacts (QPCs) are defined by electrostatic gating. By patterningQPCs of different shapes along different crystallographic directions,we study the effect of size quantization and trigonal warping on transverse electron focusing (TEF). Our TEF spectra show eight clearpeaks with comparable amplitudes and weak signatures of quantum interferenceat the lowest temperature, indicating that reflections at the gate-definededges are specular, and transport is phase coherent. The temperaturedependence of the focusing signal shows that, despite the small gate-inducedbandgaps in our sample (less than or similar to 45 meV), several peaks are visibleup to 100 K. The achievement of specular reflection, which is expectedto preserve the pseudospin information of the electron jets, is promisingfor the realization of ballistic interconnects for new valleytronicdevices.
引用
收藏
页码:5453 / 5459
页数:7
相关论文
共 50 条
  • [31] Multipole-based modal analysis of gate-defined quantum dots in graphene
    S. Mohsen Raeis-Zadeh
    Safieddin Safavi-Naeini
    The European Physical Journal B, 2013, 86
  • [32] Multipole-based modal analysis of gate-defined quantum dots in graphene
    Raeis-Zadeh, S. Mohsen
    Safavi-Naeini, Safieddin
    EUROPEAN PHYSICAL JOURNAL B, 2013, 86 (06):
  • [33] Electrostatically Induced Quantum Point Contacts in Bilayer Graphene
    Overweg, Hiske
    Eggimann, Hannah
    Chen, Xi
    Slizovskiy, Sergey
    Eich, Marius
    Pisoni, Riccardo
    Lee, Yongjin
    Rickhaus, Peter
    Watanabe, Kenji
    Taniguch, Takashi
    Fal'ko, Vladimir
    Ihn, Thomas
    Ensslin, Klaus
    NANO LETTERS, 2018, 18 (01) : 553 - 559
  • [34] Quantum computation on gate-defined semiconductor quantum dots
    LI HaiOu
    Science Bulletin, 2012, (16) : 1919 - 1924
  • [35] Gate-defined quantum dots in intrinsic silicon
    Angus, Susan J.
    Ferguson, Andrew J.
    Dzurak, Andrew S.
    Clark, Robert G.
    NANO LETTERS, 2007, 7 (07) : 2051 - 2055
  • [36] Gate-defined quantum dots on carbon nanotubes
    Biercuk, MJ
    Garaj, S
    Mason, N
    Chow, JM
    Marcus, CM
    NANO LETTERS, 2005, 5 (07) : 1267 - 1271
  • [37] A gate-defined silicon quantum dot molecule
    Liu, Hongwu
    Fujisawa, Toshimasa
    Inokawa, Hiroshi
    Ono, Yukinori
    Fujiwara, Akira
    Hirayama, Yoshiro
    APPLIED PHYSICS LETTERS, 2008, 92 (22)
  • [38] Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2
    Davari, S.
    Stacy, J.
    Mercado, A. M.
    Tull, J. D.
    Basnet, R.
    Pandey, K.
    Watanabe, K.
    Taniguchi, T.
    Hu, J.
    Churchill, H. O. H.
    PHYSICAL REVIEW APPLIED, 2020, 13 (05):
  • [39] Erratum to: Multipole-based modal analysis of gate-defined quantum dots in graphene
    S. Mohsen Raeis-Zadeh
    Safieddin Safavi-Naeini
    The European Physical Journal B, 2013, 86
  • [40] ELECTRON FOCUSING BY MULTIPLE-QUANTUM-POINT CONTACTS
    MICHIELSEN, K
    DERAEDT, H
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (34) : 7121 - 7126