Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy

被引：2

作者：

Krivobok, V. S. ^{[1
,2
]}

Pashkeev, D. A. ^{[1
]}

Klekovkin, A. V. ^{[1
]}

Minaev, I. I. ^{[1
]}

Savin, K. A. ^{[1
]}

Eroshenko, G. N. ^{[1
]}

Goncharov, A. E. ^{[1
,2
]}

Nikolaev, S. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

[2] Orion R&D Co, Moscow 143090, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2023年 / 50卷 / 09期

关键词：

type-II superlattice; molecular-beam epitaxy; reflection high-energy electron diffraction; atomic-force microscopy; X-ray diffraction analysis; OPTICAL-PROPERTIES; II SUPERLATTICE; MBE GROWTH; OPTIMIZATION; INAS;

D O I：

10.3103/S1068335623090051

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The problems of growing short-period InAs/GaSb superlattices on GaSb (100) substrates by molecular-beam epitaxy are studied. For InAs/GaSb epitaxial heterostructures, a method for forming "InSb-like" atomically smooth interfaces with an ultrathin intermediate In(As)Sb layer is developed. This technique allowed growth of a short-period superlattice containing 50 InAs/GaSb periods. In situ growth control using high-energy electron diffraction and post-growth studies of the superlattice using atomic-force microscopy and X-ray diffraction confirm the efficiency of the technique for fabricating detector structures based on type-II superlattices.

引用

页码：396 / 402

页数：7

共 50 条

[11] GROWTH-MECHANISM OF (INAS)M(GAAS)N STRAINED SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
KAWAI, T
YONEZU, H
OGASAWARA, Y
SAITO, D
PAK, K
JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7257 - 7263
[12] STRAIN RELAXATION PROCESS OF (INAS)(M)(GAAS)(N) STRAINED SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
KAWAI, T
YONEZU, H
SAITO, D
YOKOZEKI, M
PAK, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10): : 5617 - 5622
[13] Atomic intermixing in short-period InAs/GaSb superlattices
Ashuach, Y.
Kauffmann, Y.
Isheim, D.
Amouyal, Y.
Seidman, D. N.
Zolotoyabko, E.
APPLIED PHYSICS LETTERS, 2012, 100 (24)
[14] RAMAN-SCATTERING CHARACTERIZATION OF INTERFACE BROADENING IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
JUSSERAND, B
ALEXANDRE, F
PAQUET, D
LEROUX, G
APPLIED PHYSICS LETTERS, 1985, 47 (03) : 301 - 303
[15] GAS SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SHORT-PERIOD GAP/ALP(001) SUPERLATTICES
ASAHI, H
ASAMI, K
WATANABE, T
YU, SJ
KANEKO, T
EMURA, S
GONDA, S
APPLIED PHYSICS LETTERS, 1991, 58 (13) : 1407 - 1409
[16] GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAP/ALP SHORT-PERIOD SUPERLATTICES
ASAHI, H
ENOKIDA, M
ASAMI, K
KIM, JH
WATANABE, T
SONI, RK
GONDA, S
JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 268 - 272
[17] Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors
Ashuach, Y.
Lakin, E.
Saguy, C.
Kaufmann, Y.
Zolotoyabko, E.
JOURNAL OF APPLIED PHYSICS, 2014, 116 (12)
[18] Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors
Zolotoyabko, E., 1600, American Institute of Physics Inc. (116):
[19] Coherent phonon dynamics in short-period InAs/GaSb superlattices
Noe, G. T.
Haugan, H. J.
Brown, G. J.
Sanders, G. D.
Stanton, C. J.
Kono, J.
SUPERLATTICES AND MICROSTRUCTURES, 2012, 52 (06) : 1071 - 1077
[20] Growth of short-period InAs/GaSb superlattices for infrared sensing
Wang Tao
Yang Jin
Yin Fei
Wang Jing-Wei
Hu Ya-Nan
Zhang Li-Chen
Yin Jing-Zhi
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2011, 30 (06) : 511 - +

← 1 2 3 4 5 →