Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy

被引：2

作者：

Krivobok, V. S. ^{[1
,2
]}

Pashkeev, D. A. ^{[1
]}

Klekovkin, A. V. ^{[1
]}

Minaev, I. I. ^{[1
]}

Savin, K. A. ^{[1
]}

Eroshenko, G. N. ^{[1
]}

Goncharov, A. E. ^{[1
,2
]}

Nikolaev, S. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

[2] Orion R&D Co, Moscow 143090, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2023年 / 50卷 / 09期

关键词：

type-II superlattice; molecular-beam epitaxy; reflection high-energy electron diffraction; atomic-force microscopy; X-ray diffraction analysis; OPTICAL-PROPERTIES; II SUPERLATTICE; MBE GROWTH; OPTIMIZATION; INAS;

D O I：

10.3103/S1068335623090051

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The problems of growing short-period InAs/GaSb superlattices on GaSb (100) substrates by molecular-beam epitaxy are studied. For InAs/GaSb epitaxial heterostructures, a method for forming "InSb-like" atomically smooth interfaces with an ultrathin intermediate In(As)Sb layer is developed. This technique allowed growth of a short-period superlattice containing 50 InAs/GaSb periods. In situ growth control using high-energy electron diffraction and post-growth studies of the superlattice using atomic-force microscopy and X-ray diffraction confirm the efficiency of the technique for fabricating detector structures based on type-II superlattices.

引用

页码：396 / 402

页数：7

共 50 条

[31] Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
Li, J.
Gong, Q.
Li, S. G.
Li, A. Z.
Lin, C.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1703 - 1706
[32] Applicability of the k•p method to modeling of InAs/GaSb short-period superlattices
Hong, B. H.
Rybchenko, S. I.
Itskevich, I. E.
Haywood, S. K.
Intartaglia, R.
Tasco, V.
Raino, G.
De Giorgi, M.
PHYSICAL REVIEW B, 2009, 79 (16):
[33] Quantification of atomic intermixing in short-period InAs/GaSb superlattices for infrared photodetectors
1600, American Institute of Physics Inc. (113):
[34] Intrinsic optical anisotropy of [001]-grown short-period InAs/GaSb superlattices
Li, L. L.
Xu, W.
Peeters, F. M.
PHYSICAL REVIEW B, 2010, 82 (23):
[35] Growth of short-period InAs/GaSb superlattices for mid-infrared photodetectors
Haugan, H. J.
Brown, G. J.
Mahalingam, K.
Elhamri, S.
Mitchel, W. C.
Grazulis, L.
Shank, J. M.
Houston, S.
INFRARED DETECTORS AND FOCAL PLANE ARRAYS VIII, 2006, 6295
[36] Quantification of atomic intermixing in short-period InAs/GaSb superlattices for infrared photodetectors
Ashuach, Y.
Kauffmann, Y.
Saguy, C.
Grossman, S.
Klin, O.
Weiss, E.
Zolotoyabko, E.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (18)
[37] SHORT-PERIOD (ALAS)(GAAS) SUPERLATTICE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
BLOOD, P
FLETCHER, ED
FOXON, CT
APPLIED PHYSICS LETTERS, 1988, 53 (04) : 299 - 301
[38] Atomic resolution of interface diffusing in short-period InAs/GaSb superlattice
Cu, J.
Yao, Y.
Jiang, D. W.
Wang, G. W.
Wang, Y. G.
Shen, X.
Yu, R. C.
JOURNAL OF APPLIED PHYSICS, 2018, 124 (24)
[39] MOLECULAR-BEAM EPITAXY OF GASB
LONGENBACH, KF
WANG, WI
APPLIED PHYSICS LETTERS, 1991, 59 (19) : 2427 - 2429
[40] STUDY OF (INAS)M(GAAS)N SHORT-PERIOD SUPERLATTICE LAYERS GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
JANG, JG
MILLER, DL
FU, JM
ZHANG, K
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 772 - 774

← 1 2 3 4 5 →