Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy

被引：2

作者：

Krivobok, V. S. ^{[1
,2
]}

Pashkeev, D. A. ^{[1
]}

Klekovkin, A. V. ^{[1
]}

Minaev, I. I. ^{[1
]}

Savin, K. A. ^{[1
]}

Eroshenko, G. N. ^{[1
]}

Goncharov, A. E. ^{[1
,2
]}

Nikolaev, S. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia

[2] Orion R&D Co, Moscow 143090, Russia

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2023年 / 50卷 / 09期

关键词：

type-II superlattice; molecular-beam epitaxy; reflection high-energy electron diffraction; atomic-force microscopy; X-ray diffraction analysis; OPTICAL-PROPERTIES; II SUPERLATTICE; MBE GROWTH; OPTIMIZATION; INAS;

D O I：

10.3103/S1068335623090051

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The problems of growing short-period InAs/GaSb superlattices on GaSb (100) substrates by molecular-beam epitaxy are studied. For InAs/GaSb epitaxial heterostructures, a method for forming "InSb-like" atomically smooth interfaces with an ultrathin intermediate In(As)Sb layer is developed. This technique allowed growth of a short-period superlattice containing 50 InAs/GaSb periods. In situ growth control using high-energy electron diffraction and post-growth studies of the superlattice using atomic-force microscopy and X-ray diffraction confirm the efficiency of the technique for fabricating detector structures based on type-II superlattices.

引用

页码：396 / 402

页数：7

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