RAMAN-SCATTERING CHARACTERIZATION OF INTERFACE BROADENING IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：92
|
作者：
JUSSERAND, B
ALEXANDRE, F
PAQUET, D
LEROUX, G
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期
关键词：
D O I：
10.1063/1.96199
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：301 / 303
页数：3
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