Low temperature SiCN as dielectric for hybrid bonding

被引：0

作者：

Channam, Venkat Sunil Kumar ^{[1
]}

Iacovo, Serena ^{[1
]}

Walsby, Edward ^{[2
]}

Belov, Igor ^{[2
]}

Jourdain, Anne ^{[1
]}

Sepulveda, Alfonso ^{[1
]}

Beyne, Eric ^{[1
]}

机构：

[1] Imec Leuven, Leuven, Belgium

[2] SPTS KLA Milpitas, Milpitas, CA USA

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

PECVD; Low temperature SiCN; Hybrid Bonding and Cu Diffusion barrier;

D O I：

10.1109/EDTM55494.2023.10103036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For various 3D integration schemes, such as Collective Die to wafer stacking (CoD2W) and Die to wafer (D2W) bonding, the thermal budget needs to be well below 250 degrees C due to the presence of temporary bonding materials. In this paper we, present a new PECVD SiCN layer deposited at 175 degrees C, optimized for hybrid bonding applications. The layer provides void-free wafer to wafer bonding interface demonstrated by high bond strength even at a post bond annealing (PBA) temperature of 200 degrees C and devoid of any outgassing voids until 350(o)C. Additionally, it has been verified that the layer has excellent moisture and as electrical barrier properties.

引用

页数：3

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