Low temperature SiCN as dielectric for hybrid bonding

被引：0
|
作者：
Channam, Venkat Sunil Kumar [1 ]
Iacovo, Serena [1 ]
Walsby, Edward [2 ]
Belov, Igor [2 ]
Jourdain, Anne [1 ]
Sepulveda, Alfonso [1 ]
Beyne, Eric [1 ]
机构：
[1] Imec Leuven, Leuven, Belgium
[2] SPTS KLA Milpitas, Milpitas, CA USA
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
PECVD; Low temperature SiCN; Hybrid Bonding and Cu Diffusion barrier;
D O I：
10.1109/EDTM55494.2023.10103036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For various 3D integration schemes, such as Collective Die to wafer stacking (CoD2W) and Die to wafer (D2W) bonding, the thermal budget needs to be well below 250 degrees C due to the presence of temporary bonding materials. In this paper we, present a new PECVD SiCN layer deposited at 175 degrees C, optimized for hybrid bonding applications. The layer provides void-free wafer to wafer bonding interface demonstrated by high bond strength even at a post bond annealing (PBA) temperature of 200 degrees C and devoid of any outgassing voids until 350(o)C. Additionally, it has been verified that the layer has excellent moisture and as electrical barrier properties.
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页数：3
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