Low temperature SiCN as dielectric for hybrid bonding

被引：0

作者：

Channam, Venkat Sunil Kumar ^{[1
]}

Iacovo, Serena ^{[1
]}

Walsby, Edward ^{[2
]}

Belov, Igor ^{[2
]}

Jourdain, Anne ^{[1
]}

Sepulveda, Alfonso ^{[1
]}

Beyne, Eric ^{[1
]}

机构：

[1] Imec Leuven, Leuven, Belgium

[2] SPTS KLA Milpitas, Milpitas, CA USA

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

PECVD; Low temperature SiCN; Hybrid Bonding and Cu Diffusion barrier;

D O I：

10.1109/EDTM55494.2023.10103036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For various 3D integration schemes, such as Collective Die to wafer stacking (CoD2W) and Die to wafer (D2W) bonding, the thermal budget needs to be well below 250 degrees C due to the presence of temporary bonding materials. In this paper we, present a new PECVD SiCN layer deposited at 175 degrees C, optimized for hybrid bonding applications. The layer provides void-free wafer to wafer bonding interface demonstrated by high bond strength even at a post bond annealing (PBA) temperature of 200 degrees C and devoid of any outgassing voids until 350(o)C. Additionally, it has been verified that the layer has excellent moisture and as electrical barrier properties.

引用

页数：3

共 50 条

[21] Electrical Characteristics and Reliability of SiCN/Porous SiOCH Stacked Dielectric: Effects of Deposition Temperature of SiCN Film
Cheng, Yi-Lung
Lin, Yu-Lu
Peng, Wei-Fan
Lee, Chih-Yen
Lin, Yow-Jon
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (12)
[22] Scalable, sub 2μm Pitch, Cu/SiCN to Cu/SiCN Hybrid Wafer-to-Wafer Bonding Technology
Beyne, Eric
Kim, Soon-Wook
Peng, Lan
Heylen, Nancy
De Messemaeker, Joke
Okudur, Oguzhan Orkut
Phommahaxay, Alain
Kim, Tae-Gon
Stucchi, Michele
Velenis, Dimitrios
Miller, Andy
Beyer, Gerald
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2017,
[23] Hybrid Solder Joint for Low-Temperature Bonding Application
Lai, Yu-Yuan
Chao, Jui-Lin
Hsu, Chia-Jung
Wang, Chang-Meng
Wu, Albert T. T.
JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (02) : 782 - 791
[24] Hybrid plasma bonding of germanium and glass wafers at low temperature
Howlader, M. M. R.
Kibria, M. G.
Zhang, F.
MATERIALS LETTERS, 2010, 64 (13) : 1532 - 1535
[25] Low Temperature Cu Interconnect with Chip to Wafer Hybrid Bonding
Gao, Guilian
Mirkarimi, Laura
Workman, Thomas
Fountain, Gill
Theil, Jeremy
Guevara, Gabe
Liu, Ping
Lee, Bongsub
Mrozek, Pawel
Huynh, Michael
Rudolph, Catharina
Werner, Thomas
Hanisch, Anke
2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2019, : 628 - 635
[26] Development of Copper Thermal Coefficient For Low Temperature Hybrid Bonding
Dag, Sefa
Liu, Ming
Jiang, Liu
Kiaee, Amir
See, Gilbert
Lianto, Prayudi
Ayyagari-Sangamalli, Buvna
Bazizi, El Mehdi
2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC, 2023, : 342 - 349
[27] 0.5 μm Pitch Wafer-to-wafer Hybrid Bonding with SiCN Bonding Interface for Advanced Memory
Ma, Kai
Bekiaris, Nikolaos
Ramaswami, Sesh
Ding, Taotao
Probst, Gernot
Burggraf, Juergen
Uhrmann, Thomas
2023 IEEE 73RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC, 2023, : 1110 - 1114
[28] Low Temperature Hybrid Bonding for Die to Wafer Stacking Applications
Gao, Guilian
Mirkarimi, Laura
Fountain, Gill
Suwito, Dominik
Theil, Jeremy
Workman, Thomas
Uzoh, Cyprian
Guevara, Gabe
Lee, Bongsub
Huyhn, Michael
Mrozek, Pawel
IEEE 71ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2021), 2021, : 383 - 389
[29] Hybrid Solder Joint for Low-Temperature Bonding Application
Yu-Yuan Lai
Jui-Lin Chao
Chia-Jung Hsu
Chang-Meng Wang
Albert T. Wu
Journal of Electronic Materials, 2023, 52 : 782 - 791
[30] Optimization of Cu/SiCN Hybrid Bonding Process Using a Cohesive Zone Model
Yan, Dong
Roshanghias, Ali
2024 IEEE 10TH ELECTRONICS SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE, ESTC 2024, 2024,

← 1 2 3 4 5 →