Low temperature wafer bonding

被引：0
|
作者：
Farrens, S [1 ]
机构：
[1] Univ Calif Davis, Dept Elect & Comp Engn, Engn Unit 2, Davis, CA 95616 USA
来源：
SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS IV | 1998年 / 36卷
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Low Temperature wafer bonding utilizing a variety of plasma bonding methods has proven effective in producing heterostructures of sufficient strength for backthinning and device fabrication. Substrate materials include InP, GaAs, Si, and epitaxial layers. A model is proposed to account for the additional increases in contact strength and kinetic evolution of the interfacial chemistry. Preliminary device performance metrics indicate that the bonding methods are appropriate for the applications envisioned.
引用
收藏
页码：425 / 436
页数：12
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