Domain boundaries and growth manner of a-plane ZnO film on symmetric (001)LaAlO3 substrate

被引：0

作者：

Wang, Wei-Lin ^{[1
,4
]}

Chen, Wei-Chun ^{[1
]}

Ho, Yen-Teng ^{[2
]}

Chiu, Kun-An ^{[1
]}

Chang, Li ^{[3
]}

机构：

[1] Taiwan Instrument Res Inst, Natl Appl Res Labs, Hsinchu, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan

[3] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[4] Taiwan Instrument Res Inst, Natl Appl Res Labs, 20 R&D RD 6, Hsinchu, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2024年 / 625卷

关键词：

a -plane ZnO; Domain boundary; Twin; Transmission electron microscope; INVERSION DOMAIN;

D O I：

10.1016/j.jcrysgro.2023.127452

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Non-polar a-plane ZnO film grown on (00 1)LaAlO3 (LAO) substrate has been systematically characterized by employing transmission electron microscope. On (00 1)LAO substrate, a-plane ZnO film comprises two main orientation types of domains perpendicular to each other. In one orientation type of a-plane ZnO domains, stacking mismatch boundary (SMB) and inversion domain boundary (IDB) form in the coalescence of two domain islands parallel to each other. SMB is composed of m-and r-planes. IDB extends along m-plane. The in-plane growth of a-plane ZnO domains extends along the direction with-45 degrees -rotation to [0 0 01]ZnO. The bound-aries of two perpendicular a-plane ZnO domains consist of 45 degrees -boundaries and r-plane twin boundaries. The profile of a-plane ZnO domain appears as L-shape.

引用

页数：5

共 50 条

[41] Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition
Ho, Yen-Teng
Chang, Kuo-Shu
Liu, Kou-Chen
Hsieh, Li-Zen
Liang, Mei-Hui
CRYSTAL RESEARCH AND TECHNOLOGY, 2013, 48 (05) : 308 - 313
[42] Epitaxial growth of La-Ca-Mn-O thin film on out-of-plane twinned LaAlO3
Song, JH
Kim, KK
Oh, YJ
Jung, HJ
Choi, WK
Song, JH
Choi, DK
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (05): : 2437 - 2440
[43] Stability and band offsets between c -plane ZnO semiconductor and LaAlO3 gate dielectric
Wang, Jianli (jlwang@cumt.edu.cn), 1600, American Institute of Physics Inc. (123):
[44] Temperature dependent in-plane magnetic anisotropy of (La,Na)MnO3//LaAlO3 (001) thin film: Ferromagnetic resonance study
Polishchuk, D. M.
Podyalovskii, D. I.
Matviyenko, A. I.
Tovstolytkin, A. I.
Pogorily, A. M.
THIN SOLID FILMS, 2015, 589 : 697 - 700
[45] Experimental realization of atomically flat and AlO2-terminated LaAlO3 (001) substrate surfaces
Kim, Jeong Rae
Lee, Jiyeon N.
Mun, Junsik
Kim, Yoonkoo
Shin, Yeong Jae
Kim, Bongju
Das, Saikat
Wang, Lingfei
Kim, Miyoung
Lippmaa, Mikk
Kim, Tae Heon
Noh, Tae Won
PHYSICAL REVIEW MATERIALS, 2019, 3 (02):
[46] Unveiling interface structure and polarity of wurtzite ZnO film epitaxially grown on a-plane sapphire substrate
Lu, Lu
Meng, Weiwei
Wang, Yingmin
Qiang, Jianbing
Mi, Shao-Bo
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2023, 41 (06):
[47] Microstructure and growth mechanism of epitaxial SrRuO3 thin films on (001) LaAlO3 substrates
Jiang, JC
Pan, XQ
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6365 - 6369
[48] Optical characteristics of nonpolar a-plane ZnO thin film on (010) LiGaO2 substrate
Hang, Da-Ren
Islam, Sk Emdadul
Sharma, Krishna Hari
Chen, Chenlong
Liang, Chi-Te
Chou, Mitch M. C.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (08)
[49] Tilted magnetization of a La0.7Sr0.3MnO3/LaAlO3 (001) thin film
Liebmann, M
Kaiser, U
Schwarz, A
Wiesendanger, R
Pi, UH
Noh, TW
Khim, ZG
Kim, DW
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 280 (01) : 51 - 59
[50] LOSSY MODEL FOR EM SCATTERING FROM SUPERCONDUCTING FILM DEPOSITED ON DISCRETIZED LAALO3 SUBSTRATE
RONG, AS
WANG, YY
SUN, ZL
WU, PH
ELECTRONICS LETTERS, 1993, 29 (07) : 595 - 596

← 1 2 3 4 5 →