Domain boundaries and growth manner of a-plane ZnO film on symmetric (001)LaAlO3 substrate

被引：0
|
作者：
Wang, Wei-Lin [1 ,4 ]
Chen, Wei-Chun [1 ]
Ho, Yen-Teng [2 ]
Chiu, Kun-An [1 ]
Chang, Li [3 ]
机构：
[1] Taiwan Instrument Res Inst, Natl Appl Res Labs, Hsinchu, Taiwan
[2] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan
[3] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
[4] Taiwan Instrument Res Inst, Natl Appl Res Labs, 20 R&D RD 6, Hsinchu, Taiwan
来源：
JOURNAL OF CRYSTAL GROWTH | 2024年 / 625卷
关键词：
a -plane ZnO; Domain boundary; Twin; Transmission electron microscope; INVERSION DOMAIN;
D O I：
10.1016/j.jcrysgro.2023.127452
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Non-polar a-plane ZnO film grown on (00 1)LaAlO3 (LAO) substrate has been systematically characterized by employing transmission electron microscope. On (00 1)LAO substrate, a-plane ZnO film comprises two main orientation types of domains perpendicular to each other. In one orientation type of a-plane ZnO domains, stacking mismatch boundary (SMB) and inversion domain boundary (IDB) form in the coalescence of two domain islands parallel to each other. SMB is composed of m-and r-planes. IDB extends along m-plane. The in-plane growth of a-plane ZnO domains extends along the direction with-45 degrees -rotation to [0 0 01]ZnO. The bound-aries of two perpendicular a-plane ZnO domains consist of 45 degrees -boundaries and r-plane twin boundaries. The profile of a-plane ZnO domain appears as L-shape.
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页数：5
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