Domain boundaries and growth manner of a-plane ZnO film on symmetric (001)LaAlO3 substrate

被引：0

作者：

Wang, Wei-Lin ^{[1
,4
]}

Chen, Wei-Chun ^{[1
]}

Ho, Yen-Teng ^{[2
]}

Chiu, Kun-An ^{[1
]}

Chang, Li ^{[3
]}

机构：

[1] Taiwan Instrument Res Inst, Natl Appl Res Labs, Hsinchu, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan

[3] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[4] Taiwan Instrument Res Inst, Natl Appl Res Labs, 20 R&D RD 6, Hsinchu, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2024年 / 625卷

关键词：

a -plane ZnO; Domain boundary; Twin; Transmission electron microscope; INVERSION DOMAIN;

D O I：

10.1016/j.jcrysgro.2023.127452

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Non-polar a-plane ZnO film grown on (00 1)LaAlO3 (LAO) substrate has been systematically characterized by employing transmission electron microscope. On (00 1)LAO substrate, a-plane ZnO film comprises two main orientation types of domains perpendicular to each other. In one orientation type of a-plane ZnO domains, stacking mismatch boundary (SMB) and inversion domain boundary (IDB) form in the coalescence of two domain islands parallel to each other. SMB is composed of m-and r-planes. IDB extends along m-plane. The in-plane growth of a-plane ZnO domains extends along the direction with-45 degrees -rotation to [0 0 01]ZnO. The bound-aries of two perpendicular a-plane ZnO domains consist of 45 degrees -boundaries and r-plane twin boundaries. The profile of a-plane ZnO domain appears as L-shape.

引用

页数：5

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