Optical characteristics of nonpolar a-plane ZnO thin film on (010) LiGaO2 substrate

被引：15
|
作者：
Hang, Da-Ren [1 ,2 ]
Islam, Sk Emdadul [1 ]
Sharma, Krishna Hari [1 ]
Chen, Chenlong [1 ,3 ]
Liang, Chi-Te [4 ]
Chou, Mitch M. C. [1 ,3 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[3] Natl Sun Yat Sen Univ, NSC Taiwan Consortium Emergent Crystalline Mat, Kaohsiung 804, Taiwan
[4] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 08期
关键词：
zinc oxide; photoluminescence; Raman; non-polar; MULTIPLE-QUANTUM WELLS; LIALO2; 100; TEMPERATURE-DEPENDENCE; GROWTH;
D O I：
10.1088/0268-1242/29/8/085004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the optical properties of non-polar a-plane ZnO film grown on (010) LiGaO2 substrate by chemical vapor deposition. X-ray diffraction indicates the a-plane orientation and Raman spectroscopy reveals the phase purity. Four distinct features in the near band-edge range are identified as neutral-donor-bound-exciton (D degrees X), free-exciton (FX), free-to-bound, and donor-acceptor pair transitions. The thermal activation energy of D degrees X is 12 meV while an acceptor energy level of 124 meV is estimated. Temperature evolution of photoluminescence (PL) shows that the room-temperature luminescence is a mixture of free-to-bound and FX transitions. The polarization dependence of the near-band-edge transitions were investigated. The largest degree of polarization of 95.5% occurs in FX transition. It can be attributed to anisotropic in-plane strain and the nonpolar a-plane orientation.
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页数：6
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