III-nitride nanowires for emissive display technology

被引：3

作者：

Vignesh, Veeramuthu ^{[1
]}

Wu, Yuanpeng ^{[2
]}

Kim, Sung-Un ^{[1
]}

Oh, Jeong-Kyun ^{[1
]}

Bagavath, Chandran ^{[1
]}

Um, Dae-Young ^{[1
]}

Mi, Zetian ^{[2
,3
]}

Ra, Yong-Ho ^{[1
,4
]}

机构：

[1] JeonbukNat Univ JBNU, Coll Engn, Res Ctr Adv Mat Dev RCAMD, Div Adv Mat Engn, Jeonju, South Korea

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI USA

[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[4] Jeonbuk Natl Univ JBNU, Coll Engn, Res Ctr Adv Mat Dev RCAMD, Div Adv Mat Engn, 567 Baekje Daero, Jeonju 54896, South Korea

来源：

JOURNAL OF INFORMATION DISPLAY | 2024年 / 25卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

mu-LED; full-color LED; InGaN nanowires; multi-quantum well (MQW); display technology; LIGHT-EMITTING-DIODES; INTERNAL QUANTUM EFFICIENCY; SELECTIVE-AREA GROWTH; VAPOR-PHASE EPITAXY; GAN NANOWIRES; PHOSPHOR-FREE; INGAN NANOWIRES; SEMICONDUCTOR NANOWIRES; OPTICAL-PROPERTIES; SINGLE-CHIP;

D O I：

10.1080/15980316.2023.2282937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The field of III-nitride (InGaN) nanowire micro light-emitting diode (mu -LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced mu -LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-mu -LED displays and possible solutions to address them.

引用

页码：13 / 59

页数：47

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