III-nitride nanowires for emissive display technology

被引：3
|
作者：
Vignesh, Veeramuthu [1 ]
Wu, Yuanpeng [2 ]
Kim, Sung-Un [1 ]
Oh, Jeong-Kyun [1 ]
Bagavath, Chandran [1 ]
Um, Dae-Young [1 ]
Mi, Zetian [2 ,3 ]
Ra, Yong-Ho [1 ,4 ]
机构：
[1] JeonbukNat Univ JBNU, Coll Engn, Res Ctr Adv Mat Dev RCAMD, Div Adv Mat Engn, Jeonju, South Korea
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI USA
[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[4] Jeonbuk Natl Univ JBNU, Coll Engn, Res Ctr Adv Mat Dev RCAMD, Div Adv Mat Engn, 567 Baekje Daero, Jeonju 54896, South Korea
来源：
JOURNAL OF INFORMATION DISPLAY | 2024年 / 25卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
mu-LED; full-color LED; InGaN nanowires; multi-quantum well (MQW); display technology; LIGHT-EMITTING-DIODES; INTERNAL QUANTUM EFFICIENCY; SELECTIVE-AREA GROWTH; VAPOR-PHASE EPITAXY; GAN NANOWIRES; PHOSPHOR-FREE; INGAN NANOWIRES; SEMICONDUCTOR NANOWIRES; OPTICAL-PROPERTIES; SINGLE-CHIP;
D O I：
10.1080/15980316.2023.2282937
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The field of III-nitride (InGaN) nanowire micro light-emitting diode (mu -LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced mu -LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-mu -LED displays and possible solutions to address them.
引用
收藏
页码：13 / 59
页数：47
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