Doping of III-nitride materials

被引：80
|
作者：
Pampili, Pietro [1 ,2 ]
Parbrook, Peter J. [1 ,2 ]
机构：
[1] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[2] Univ Coll Cork, Sch Engn, Western Rd, Cork, Ireland
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 62卷
基金：
爱尔兰科学基金会;
关键词：
Gallium Nitride; Indium Nitride; Aluminium Nitride; Semiconductors; Doping; Conductivity; P-TYPE CONDUCTION; MG-DOPED GAN; VAPOR-PHASE EPITAXY; ER-IMPLANTED GAN; N-TYPE GAN; ELECTRICAL-PROPERTIES; BAND-GAP; OPTICAL-PROPERTIES; ION-IMPLANTATION; GALLIUM NITRIDE;
D O I：
10.1016/j.mssp.2016.11.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as extending power electronic devices. It is found that doping of AlGaN and InGaN alloys with low-gallium-content has particular challenges, especially for p-materials and these issues are described.
引用
收藏
页码：180 / 191
页数：12
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