III-Nitride vertical devices

被引：1
|
作者：
Oka, Tohru [1 ]
机构：
[1] Toyoda Gosei Co Ltd, Kiyosu, Japan
来源：
III-NITRIDE ELECTRONIC DEVICES | 2019年 / 102卷
关键词：
DIODES; TRANSISTORS;
D O I：
10.1016/bs.semsem.2019.08.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：219 / 242
页数：24
相关论文
共 50 条
  • [1] III-nitride UV devices
    Khan, M. Asif
    Shatalov, M.
    Maruska, H.P.
    Wang, H.M.
    Kuokstis, E.
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 10 (7191-7206):
  • [2] III-nitride UV devices
    Khan, MA
    Shatalov, M
    Maruska, HP
    Wang, HM
    Kuokstis, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7191 - 7206
  • [3] III-nitride quantum devices - Microphotonics
    Jiang, HX
    Lin, JY
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2003, 28 (02) : 131 - 183
  • [4] III-Nitride Electronic Devices Preface
    Chu, Rongming
    Shinohara, Keisuke
    III-NITRIDE ELECTRONIC DEVICES, 2019, 102 : XI - XII
  • [5] GaN Substrates for III-Nitride Devices
    Paskova, Tanya
    Hanser, Drew A.
    Evans, Keith R.
    PROCEEDINGS OF THE IEEE, 2010, 98 (07) : 1324 - 1338
  • [6] III-Nitride semiconductors for intersubband devices
    Kotsar, Y.
    Machhadani, H.
    Sakr, S.
    Kandaswamy, P. K.
    Tchernycheva, M.
    Bellet-Amalric, E.
    Julien, F. H.
    Monroy, E.
    QUANTUM SENSING AND NANOPHOTONIC DEVICES VIII, 2011, 7945
  • [7] Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering
    Peart, Matthew R.
    Wierer, Jonathan J., Jr.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (02) : 571 - 575
  • [8] Epitaxial growth of III-nitride electronic devices
    Cao, Yu
    III-NITRIDE ELECTRONIC DEVICES, 2019, 102 : 41 - 113
  • [9] Polarization fields in III-nitride nanowire devices
    Mastro, Michael A.
    Simpkins, Blake
    Wang, George T.
    Hite, Jennifer
    Eddy, Charles R., Jr.
    Kim, Hong-Youl
    Ahn, Jaehui
    Kim, Jihyun
    NANOTECHNOLOGY, 2010, 21 (14)
  • [10] III-nitride unipolar light emitting devices
    Shreter, YG
    Rebane, YT
    Wang, WN
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 180 (01): : 307 - 313
12345