Epitaxial growth of III-nitride electronic devices

被引：3
|
作者：
Cao, Yu [1 ]
机构：
[1] Qorvo Inc, Richardson, TX 75082 USA
来源：
III-NITRIDE ELECTRONIC DEVICES | 2019年 / 102卷
关键词：
MOLECULAR-BEAM EPITAXY; HETEROJUNCTION BIPOLAR-TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; ALGAN/GAN HETEROSTRUCTURES; MOBILITY TRANSISTORS; PHONON SCATTERING; CARRIER-DENSITY; OHMIC CONTACTS; QUANTUM-WELLS;
D O I：
10.1016/bs.semsem.2019.08.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：41 / 113
页数：73
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