Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

被引：0

作者：

Mosbahi, H. ^{[1
]}

Essaoudi, A. ^{[2
]}

Gorji, N. E. ^{[3
]}

Gassoumi, A. ^{[4
]}

Almohammedi, A. ^{[5
]}

Helali, A. ^{[6
]}

Gassoumi, M. ^{[2
]}

机构：

[1] Univ Sousse, Higher Inst Transport & Logist, Dept Transport Technol & Engn, Tunis, Tunisia

[2] Univ Monastir, Lab Condensed Matter & Nanosci, Monastir 5000, Tunisia

[3] Technol Univ Dublin, Mechatron Engn, Dublin, Ireland

[4] King Khalid Univ, Fac Sci, Dept Phys, POB 9004, Abha 61413, Saudi Arabia

[5] Islamic Univ Madinah, Fac Sci, Dept Phys, Madinah 42351, Saudi Arabia

[6] Univ Monastir, Lab Micro Optoelect & Nanostruct LMON, Ave Environm, Monastir 5019, Tunisia

来源：

JOURNAL OF OVONIC RESEARCH | 2023年 / 19卷 / 06期

关键词：

AlGaN/GaN/Si HEMTs; DC measurements; Conductance; Impedance spectroscopy; Dielectric measurements; Electron trap; DLTS; DISPERSION; VOLTAGE; DIODES; SI;

D O I：

10.15251/JOR.2023.196.763

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.

引用

页码：763 / 773

页数：11

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