Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

被引：0

作者：

Mosbahi, H. ^{[1
]}

Essaoudi, A. ^{[2
]}

Gorji, N. E. ^{[3
]}

Gassoumi, A. ^{[4
]}

Almohammedi, A. ^{[5
]}

Helali, A. ^{[6
]}

Gassoumi, M. ^{[2
]}

机构：

[1] Univ Sousse, Higher Inst Transport & Logist, Dept Transport Technol & Engn, Tunis, Tunisia

[2] Univ Monastir, Lab Condensed Matter & Nanosci, Monastir 5000, Tunisia

[3] Technol Univ Dublin, Mechatron Engn, Dublin, Ireland

[4] King Khalid Univ, Fac Sci, Dept Phys, POB 9004, Abha 61413, Saudi Arabia

[5] Islamic Univ Madinah, Fac Sci, Dept Phys, Madinah 42351, Saudi Arabia

[6] Univ Monastir, Lab Micro Optoelect & Nanostruct LMON, Ave Environm, Monastir 5019, Tunisia

来源：

JOURNAL OF OVONIC RESEARCH | 2023年 / 19卷 / 06期

关键词：

AlGaN/GaN/Si HEMTs; DC measurements; Conductance; Impedance spectroscopy; Dielectric measurements; Electron trap; DLTS; DISPERSION; VOLTAGE; DIODES; SI;

D O I：

10.15251/JOR.2023.196.763

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.

引用

页码：763 / 773

页数：11

共 50 条

[21] Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate
Tang, Shun-Wei
Chen, Szu-Chia
Wu, Tian-Li
MICROELECTRONICS RELIABILITY, 2021, 126
[22] Radiation Effects in AlGaN/GaN HEMTs
Fleetwood, Daniel M.
Zhang, En Xia
Schrimpf, Ronald D.
Pantelides, Sokrates T.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 69 (05) : 1105 - 1119
[23] Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.
Palankovski, V.
Muradt, S.
Rodle, T.
Quay, R.
Selberherr, S.
SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 273 - +
[24] Subthreshold Mobility in AlGaN/GaN HEMTs
Waller, William M.
Uren, Michael J.
Lee, Kean Boon
Houston, Peter A.
Wallis, David J.
Guiney, Ivor
Humphreys, Colin J.
Pandey, Saurabh
Sonsky, Jan
Kuball, Martin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (05) : 1861 - 1865
[25] Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.
Palankovski, V.
Murad, S.
Roedle, T.
Quay, R.
Selberherr, S.
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2007 IEEE CSIC SYMPOSIUM, TECHNOLOGY DIGEST, 2007, : 131 - +
[26] Electroluminescence characterization of AlGaN/GaN HEMTs
Lossy, Richard
Glowacki, Arkadiusz
Boit, Christian
Wuerfl, Joachim
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, 2009, 6 (06): : 1382 - +
[27] On the Radiation Tolerance of AlGaN/GaN HEMTs
Weaver, B. D.
Anderson, T. J.
Koehler, A. D.
Greenlee, J. D.
Hite, J. K.
Shahin, D. I.
Kub, F. J.
Hobart, K. D.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (07) : Q208 - Q212
[28] Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
Faqir, Mustapha
Verzellesi, Giovanni
Meneghesso, Gaudenzio
Zanoni, Enrico
Fantini, Fausto
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (07) : 1592 - 1602
[29] Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs
Duan BaoXing
Yang YinTang
SCIENCE CHINA-INFORMATION SCIENCES, 2012, 55 (02) : 473 - 479
[30] Analysis of Time Dependent Current Collapse in AlGaN/GaN HEMTs
Maeta, Ryo
Tokuda, Hirokuni
Kuzuhara, Masaaki
2014 10TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES & MICROSYSTEMS (ASDAM), 2014, : 149 - 152

← 1 2 3 4 5 →