Hydrodynamic modeling of AlGaN/GaN HEMTs

被引：1
|
作者：
Vitanov, S. [1 ]
Palankovski, V. [1 ]
Muradt, S. [2 ]
Rodle, T. [2 ]
Quay, R. [3 ]
Selberherr, S. [1 ]
机构：
[1] Vienna Univ Technol, Inst Microelect, Adv Mat & Device Anal Grp, A-1040 Vienna, Austria
[2] Imperial Canc Res Fund, NXP Semiconduct, NL-6534 Nijmegen, Netherlands
[3] IAF, Fraunhofer Inst Solid State Phys, D-79108 Freiberg, Germany
来源：
SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007 | 2007年
关键词：
D O I：
10.1007/978-3-211-72861-1_65
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to properly model the electron transport. We modify an existing hydrodynamic mobility model in order to achieve a better agreement with Monte Carlo (MC) simulation data and measured DC and AC characteristics of AlGaN/GaN HEMTs.
引用
收藏
页码：273 / +
页数：2
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