Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

被引：0

作者：

Mosbahi, H. ^{[1
]}

Essaoudi, A. ^{[2
]}

Gorji, N. E. ^{[3
]}

Gassoumi, A. ^{[4
]}

Almohammedi, A. ^{[5
]}

Helali, A. ^{[6
]}

Gassoumi, M. ^{[2
]}

机构：

[1] Univ Sousse, Higher Inst Transport & Logist, Dept Transport Technol & Engn, Tunis, Tunisia

[2] Univ Monastir, Lab Condensed Matter & Nanosci, Monastir 5000, Tunisia

[3] Technol Univ Dublin, Mechatron Engn, Dublin, Ireland

[4] King Khalid Univ, Fac Sci, Dept Phys, POB 9004, Abha 61413, Saudi Arabia

[5] Islamic Univ Madinah, Fac Sci, Dept Phys, Madinah 42351, Saudi Arabia

[6] Univ Monastir, Lab Micro Optoelect & Nanostruct LMON, Ave Environm, Monastir 5019, Tunisia

来源：

JOURNAL OF OVONIC RESEARCH | 2023年 / 19卷 / 06期

关键词：

AlGaN/GaN/Si HEMTs; DC measurements; Conductance; Impedance spectroscopy; Dielectric measurements; Electron trap; DLTS; DISPERSION; VOLTAGE; DIODES; SI;

D O I：

10.15251/JOR.2023.196.763

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.

引用

页码：763 / 773

页数：11

共 50 条

[1] Source access impedance model for AlGaN/GaN HEMTs
Xu, Y.
Guo, Y.
Wu, Y.
Xu, R.
Yan, B.
Lin, W.
ELECTRONICS LETTERS, 2009, 45 (23) : 1193 - 1194
[2] Analysis of Time Dependent Electric Field Degradation in AlGaN/GaN HEMTs
Hodge, Michael D.
Heller, Eric R.
Vetury, Ramakrishna
Shealy, Jeffrey B.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (09) : 3145 - 3151
[3] The analysis model of AlGaN/GaN HEMTs with electric field modulation effect
Yang, Luoyun
Duan, Baoxing
Dong, Ziming
Wang, Yandong
Yang, Yintang
IETE TECHNICAL REVIEW, 2020, 37 (06) : 553 - 564
[4] Impedance spectroscopy of AlGaN/GaN HEMTs in contact with culture media
Witte, Hartmut
Charpentier, Michael
Warnke, Christian
Mueller, Mathias
Guenther, Kay-Michael
Dadgar, Armin
Krost, Alois
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 2, 2010, 7 (02): : 464 - 467
[5] Frequency and breakdown properties of AlGaN/GaN HEMTs
Vertiatchikh, A
Schaff, WJ
Eastman, LF
Matulionis, A
2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS, 2004, : 132 - 137
[6] Dynamic loadline analysis of AlGaN/GaN HEMTs
Green, BM
Kaper, VS
Tilak, V
Shealy, JR
Eastman, LF
IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 443 - 452
[7] Analysis of the thermal behavior of AlGaN/GaN HEMTs
Russo, Salvatore
d'Alessandro, Vincenzo
Costagliola, Maurizio
Sasso, Grazia
Rinaldi, Niccolo
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (15): : 1343 - 1351
[8] Electrical properties of AlGaN/GaN HEMTs in stretchable geometries
Tompkins, R. P.
Mahaboob, I.
Shahedipour-Sandvik, F.
Lazarus, N.
SOLID-STATE ELECTRONICS, 2017, 136 : 36 - 42
[9] Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer
Qu, Shenqi
Wang, Xiaoliang
Xiao, Hongling
Wang, Cuimei
Jiang, Lijuan
Feng, Chun
Chen, Hong
Yin, Haibo
Peng, Enchao
Kang, He
Wang, Zhanguo
Hou, Xun
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 66 (02):
[10] Electroluminescence in AlGaN/GaN HEMTS
Ohno, Y
Nakao, T
Akita, M
Kishimoto, S
Maezawa, K
Mizutani, T
COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 119 - 124

← 1 2 3 4 5 →